Dual-growth chamber Molecular Beam Epitaxy System (2 Lots)

A Contract Award Notice
by UNIVERSITY OF SHEFFIELD

Source: Find a Tender
Type: Contract (Supply)
Duration: 19.5 month (est.)
Value: £6M

Sector: INDUSTRIAL
Published: 03 Oct 2025
Delivery: To 26 May 2027 (est.)
Deadline: n/a

Concepts

Location

The University of Sheffield School of Electrical & Electronic Engineering (National Epitaxy Facility)

Geochart for 2 buyers and 1 suppliers

2 buyers

Sheffield University Sheffield

1 supplier

Dca Instruments Oy Turku

Description

The EPSRC National Epitaxy Facility (NEF) based at the University of Sheffield has been providing bespoke semiconductor wafers to academia and industry for 45 years. It is a unique world-class centre combining technical excellence and expertise with state-of-the-art epitaxy and material characterization equipment. We are looking to further enhance our capability provision to the UK semiconductor community, by investing in a new linked dual-chamber Molecular Beam Epitaxy (MBE) System for arsenides/phosphides and arsenides/antimonides growth that is fully automated, capable of 24/7 operation, reliable, and resource-efficient allowing further expansion in the future.

Lot Division

MBE System

The system is replacing two existing VG reactors capable of 4" wafer growth of high-quality arsenides/phosphides and arsenides/antimonides, and should offer higher throughput thanks to automation of growth recipes for 24/7 operation, and integrated solutions allowing maintenance of critical components (such as ion gauges, cells) without breaking chamber vacuum.

Award Criteria

Quality & Technical	80.0
PRICE	20.0

In-situ monitoring equipment

As described within the tender documents

Award Criteria

Quality & technical	80.0
Cost	20.0

Award Detail

1	Dca Instruments Oy (Turku) MBE System Reference: 4420/dm/25 Num offers: 4 Value: £4,878,210 Contractor is an SME.

Renewal Options